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EUV may prove irresistable
July 2, 2008
Last Thursday, the R&D Daily made one of its occasional forays into the fast-paced world of semiconductor technology, specifically extreme ultraviolet lithography (EUVL). According to new measurements from the National Institute of Standards and Technology, the photoresists designed for use with this hotly-anticipated new technology are twice as effective is previously thought.
The discrepancy was caused by an older measurement method. Unfortunately, it’s not great news for EUV developers because it strongly indicates existing optics are only half as effective as previously thought.
However, judging from a recent conversations with technical leaders at Cymer, a major U.S. maker of radiation sources for semiconductor lithography, the rolling ball that is EUVL won’t be stopped anytime soon.
Cymer is one of just a few companies at the forefront of a race to develop a viable EUV scanner to replace existing 193 nm argon-fluoride-based devices which now dominate the semiconductor industry. Like other companies, it pushing to design a powerful light source in the about 13 nm wavelength range. So far, it has achieved 25 W of continuous power and intends to break 100 W by year’s end. And, like other companies, it must deal with the intense heat generated by such light and design robust optics which are efficient enough to achieve conversion goals.
Only with adequate conversion efficiency will developers of EUVL be in a position to deliver the performance needed when the market wants it.
It remains to be seen whether EUVL is the new standard in 2012 (the target date for widespread adoption of new scanners). But R&D Magazine will be closely following the progress of this and other technologies aimed at the next-generation of microchips; the push to keep us on the path of that oft-cited economic law of Gordon Moore will continue to surprise us.
